Deposition of nano-crystal silicon using a single wafer chamber

Solicitante: Applied Materials, Inc. (Santa Clara, CA)
N. de publicación: US 7265036

Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300.degree. C. to about 490.degree. C. A silicon source is also fed into the single wafer chamber

Si desea obtener más información sobre este contenido contacte con nuestro Centro de Documentación

Regístrate para leer más